Modeling and Analysis for Thermal Management in Gallium Nitride HEMTs Using Microfluidic Cooling
| Autor: | Gunjan Agarwal, Thomas W. Kenny, Thomas E. Kazior, Dana Weinstein |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Gallium nitride 02 engineering and technology High-electron-mobility transistor 01 natural sciences law.invention chemistry.chemical_compound law 0103 physical sciences Electronic engineering Microelectronics Electrical and Electronic Engineering 010302 applied physics business.industry Amplifier Transistor Dissipation 021001 nanoscience & nanotechnology Computer Science Applications Electronic Optical and Magnetic Materials Electric power transmission CMOS chemistry Mechanics of Materials Optoelectronics 0210 nano-technology business |
| Zdroj: | Journal of Electronic Packaging. 139 |
| ISSN: | 1528-9044 1043-7398 |
| DOI: | 10.1115/1.4035064 |
| Popis: | In this paper, thermal management in GaN (gallium nitride) based microelectronic devices is addressed using microfluidic cooling. Numerical modeling is done using finite element analysis (FEA), and the results for temperature distribution are presented for a system comprising multiple cooling channels underneath GaN high-electron mobility transistors (HEMTs). The thermal stack modeled is compatible for heterogeneous integration with conventional silicon-based CMOS devices. Parametric studies for cooling performance are done over a range of geometric and flow factors to determine the optimal cooling configuration within the specified constraints. A power dissipation of 2–4 W/mm is modeled along each HEMT finger in the proposed configuration. The cooling arrangements modeled here hold promising potential for implementation in high-performance radio-frequency (RF) systems for power amplifiers, transmission lines, and other applications in defense and military. |
| Databáze: | OpenAIRE |
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