In-related complex defects and emission of in-doped ZnO nanocrystal films
Autor: | B. El Filali, Tetyana Torchynska, Georgiy Polupan |
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Rok vydání: | 2019 |
Předmět: |
010302 applied physics
Materials science Photoluminescence Scanning electron microscope Doping Analytical chemistry 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electron spectroscopy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Crystal Crystallinity X-ray photoelectron spectroscopy Nanocrystal 0103 physical sciences 0210 nano-technology |
Zdroj: | Physica E: Low-dimensional Systems and Nanostructures. 113:137-142 |
ISSN: | 1386-9477 |
Popis: | ZnO nanocrystal (NC) films grown by ultrasonic spray pyrolysis , doped with the In atoms in different concentrations and annealed at 400 °C for 4 h in nitrogen flow have been studied. The scanning electron microscopy (SEM), X ray diffraction (XRD), photoluminescence (PL) and X-ray photo electronic spectroscopy (XPS) have been used. It was shown that the PL intensity of near band edge (NBE) emission enlarges significantly and the PL intensity of green PL band suppresses at small In contents ≤ 2.0 at%. The later confirms the occupation of zinc vacancies by In ions with the formation of the substitutional In Zn donor defects and ZnO crystal quality improving. At higher In contents the new NBE emission band B (3.034eV) appears in PL spectra and its peak shifts to lower energy with In content increasing. The joint analysis of PL and XRD results permits to suppose that the defects responsible for the PL band B are some complexes, which were formed by the coagulation of the substitutional and interstitial In atoms. Simultaneously, the PL intensity and ZnO film crystallinity falling down and the ZnO crystal lattice parameters increase. To study a nature of the In related complex defects, XPS spectra have been investigated for the films with the different In contents. XPS spectrum varying versus In contents has confirmed the complex In defect nature. The dependence of In i complex defect formation versus In contents in ZnO NC films is analyzed and discussed. The optimal In concentration range to fabricate the ZnO films with high optical parameters has been estimated. |
Databáze: | OpenAIRE |
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