Analysis of the reverse patterning phenomenon caused by a light source change in an attenuated phase shift mask
| Autor: | Chang-Jin Kang, Dae-Youp Lee, Chilhee Chung, Chul-Ho Kim, Byoungdeog Choi |
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| Rok vydání: | 2013 |
| Předmět: |
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Materials science Bar (music) business.industry fungi Condensed Matter Physics Dark field microscopy Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Wavelength Light source Optics law Transmittance Phase-shift mask Optoelectronics sense organs Electrical and Electronic Engineering Photolithography business |
| Zdroj: | Microelectronic Engineering. 104:33-36 |
| ISSN: | 0167-9317 |
| Popis: | An attenuated phase shift mask (PSM) (half-tone PSM) is an effective and common technique for resolution enhancement and for forming specific patterns. When an ArF-attenuated PSM with hole- or space-type patterns is used under a KrF light source scanner, the original hole or space patterns are changed to island or bar patterns. In other words, reverse patterns are obtained from the original patterns. This phenomenon is explained by the transmittance change in the attenuated PSM due to the change in the light source. The wavelength of the original light source is extended when the light source is changed, and consequently, the dark field transmittance of this attenuated PSM becomes greater than the original transmittance. Thus, the final pattern becomes the inverse of the original pattern. |
| Databáze: | OpenAIRE |
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