A high performance charge plasma based lateral bipolar transistor on selective buried oxide
| Autor: | Sajad A. Loan, Shuja A. Abbasi, Mohammad Rafat, Abdul Rehman Alamoud, Faisal Bashir |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Silicon business.industry Amplifier Transistor Bipolar junction transistor Analytical chemistry chemistry.chemical_element Plasma Condensed Matter Physics Cutoff frequency Electronic Optical and Magnetic Materials law.invention chemistry law Materials Chemistry Optoelectronics Breakdown voltage Transient (oscillation) Electrical and Electronic Engineering business |
| Zdroj: | Semiconductor Science and Technology. 29:015011 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/29/1/015011 |
| Popis: | In this paper, we present a new structure of lateral bipolar transistor on selective buried oxide. The device does not use highly doped regions; however, it employs the concept of creating n and p type charge plasma in undoped silicon by using metal electrodes of different work functions. The proposed device is named as the selective buried oxide based bipolar charge plasma transistor (SELBOX-BCPT). An extensive 2D simulation study has revealed that the proposed SELBOX-BCPT device not only possesses all the advantages of the conventional BCPT device, but it also addresses various severe problems of the BCPT device. A significant improvement in major issues of poor cutoff frequency (fT), low breakdown voltage and thermal efficiency has been achieved. It has been observed that the fT has increased by ∼94.6%, the breakdown voltage by 23.47% and the device is much cooler than the conventional BCPT device. A large current gain is obtained in the proposed device and is on a par with the conventional BCPT device. Further, by using mixed-mode simulation feature of the Atlas simulator, inverting amplifiers based on SELBOX-BCPT and the conventional BCPT have been realized. A significant improvement of 15% in switching-on transient time and 25.8% in switching-off transient time has been achieved in the proposed device in comparison to the conventional BCPT device. |
| Databáze: | OpenAIRE |
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