Characterization of Atomic Layer Deposited Ultrathin HfO2 Film as a Diffusion Barrier in Cu Metallization

Autor:	Prodyut Majumder, Rajesh Katamreddy, Christos G. Takoudis
Rok vydání:	2007
Předmět:	Barrier layer Atomic layer deposition Materials science Diffusion barrier X-ray photoelectron spectroscopy Analytical chemistry Thin film Layer (electronics) Sheet resistance Amorphous solid
Zdroj:	MRS Proceedings. 990
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-0990-b09-03
Popis:	Thermally stable, amorphous HfO2 thin films deposited using atomic layer deposition have been studied as a diffusion barrier between Cu and the Si substrate. 4 nm thick as-deposited HfO2 films deposited on Si are characterized with X-ray photoelectron spectroscopy. Cu/HfO2/ samples are annealed at different temperatures, starting from 500 °C, in the presence of N2 atmosphere for 5 min and characterized using sheet resistance, X-ray diffraction and scanning electron microscopy. Ultrathin HfO2 films are found to be effective diffusion barrier between Cu and Si with a high failure temperature of about 750 °C.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::18de709d8fb5ef29d1bb119146e778cf https://doi.org/10.1557/proc-0990-b09-03 Zobrazit plný text záznamu Full text from SpringerLink