Simultaneously elevating the resistive switching level and ambient-air-stability of 3D perovskite (TAZ-H)PbBr3-based memory device by encapsulating into polyvinylpyrrolidone

Autor: Kaiyue Song, Lingling Du, Guoli Yue, Tao Li, Haohong Li, Shoutian Zheng, Zhirong Chen, Huidong Zheng
Rok vydání: 2023
Předmět:
Zdroj: Journal of Colloid and Interface Science. 642:408-420
ISSN: 0021-9797
DOI: 10.1016/j.jcis.2023.03.192
Databáze: OpenAIRE