The Electrical Characterization of Nitride/Oxide Ion Sensitive Field Effect Transistor (NO-ISFET)
| Autor: | Apirak Pankiew, Natthaphat Thornyanadacha, Awirut Srisuwan, Win Bunjongpru, Anucha Ruangphanit |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Oxide 02 engineering and technology Nitride 021001 nanoscience & nanotechnology 01 natural sciences Characterization (materials science) chemistry.chemical_compound Silicon nitride chemistry CMOS 0103 physical sciences Optoelectronics Field-effect transistor ISFET 0210 nano-technology business Sensitivity (electronics) |
| Zdroj: | 2020 8th International Electrical Engineering Congress (iEECON). |
| Popis: | This article describes the electrical characterization of the Nitride/Oxide Ion Sensitive Field Effect Transistor (NO-ISFET). The ISFET was processed with a standard 0.8 µm CMOS process. The ISFET structural in this study contains 10 nm thick oxide, capped with 30 nm thick silicon nitride acting as a sensing film. The designed dimension, channel width per channel length (W/L) is 2000µm/100µm. The I DS -V GS and I DS -V DS characteristics of the device based on this proposed structure are measured.From the experiment, our ISFET exhibited the pH sensitivity approximately 56.67 mV/pH. The measured current sensitivity is about 9 µA/pH at VDS of 0.3 V and the gate voltage (V GS ) of 1.2 V. |
| Databáze: | OpenAIRE |
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