Low-Energy Ion Implantation Using the Arsenic Dimer Ion: Process Characterization and Throughput Improvement
| Autor: | Brian Scott Freer, Peter M. Kopalidis, Mark Rathmell |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Materials science
Renewable Energy Sustainability and the Environment Dimer Analytical chemistry chemistry.chemical_element Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ion Secondary ion mass spectrometry chemistry.chemical_compound Ion implantation Low energy chemistry Materials Chemistry Electrochemistry Implant Sheet resistance Arsenic |
| Zdroj: | Journal of The Electrochemical Society. 152:G623 |
| ISSN: | 0013-4651 |
| DOI: | 10.1149/1.1945728 |
| Popis: | Low-energy arsenic implants used in the formation of ultrashallow junctions are characterized on a high current ion implanter. Significant advantages in beam current and process throughput are demonstrated by using the arsenic dimer ion (As + 2 ) for implant energies lower than 5 keV. Dimer implants require only half the dose and use twice the energy of equivalent As+ implants, resulting in significantly reduced implant times. Process results including Thermawave (TW), sheet resistance (R s ), secondary ion mass spectrometry (SIMS) profiles, electrical test and yield show equivalence between As + and As + 2 implants. |
| Databáze: | OpenAIRE |
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