| Autor: |
P. Trubenko, Alexey Komissarov, Igor Berishev, A. Ovtchinnikov, N. Moshegov, Andrei Berezin, Svetlan Todorov, Lisa Wright |
| Rok vydání: |
2005 |
| Předmět: |
|
| Zdroj: |
Novel In-Plane Semiconductor Lasers IV. |
| ISSN: |
0277-786X |
| Popis: |
High power highly-efficient AlGa(In)As/GaAs multimode diodes operating at 915 nm range have been developed. 2 mm long-cavity Chips-On-Submount demonstrate 72% peak power conversion efficiency at 25°C heatsink temperature. Peak power efficiency over 50% was recorded up to 130°C heatsink temperature. CW power launched at 7°C heatsink temperature from 20 um wide aperture devices is around 8.5 W and is thermally limited. This output power level translates into record-high brightness on the facet: > 65 MW/cm2. Device reliability assessment indicates high potential of such devices to operate reliably at high electrical and optical power densities. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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