A 1‐W Ka‐band power amplifier using 0.15‐μm InGaAs/GaAs E‐mode pHEMT technology
Autor: | Jeongsoo Park, Kwang-Chun Lee, Jeong-Geun Kim, Sunwoo Kong, Hui Dong Lee, Kwang-Seon Kim, Bonghyuk Park |
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Rok vydání: | 2019 |
Předmět: |
Materials science
Ingaas gaas business.industry Amplifier Mode (statistics) High-electron-mobility transistor Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Extremely high frequency Optoelectronics Ka band Electrical and Electronic Engineering business Monolithic microwave integrated circuit |
Zdroj: | Microwave and Optical Technology Letters. 61:1706-1711 |
ISSN: | 1098-2760 0895-2477 |
Databáze: | OpenAIRE |
Externí odkaz: |