Ka-band InP HEMT MMIC reliability

Autor: M. Delaney, L. Nguyen, B.M. Paine, R. Wong, K. Hum, A. Schmitz, R. Walden
Rok vydání: 2002
Předmět:
Zdroj: 2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513).
DOI: 10.1109/gaasrw.2000.902417
Popis: We report on reliability tests on InP HEMT MMICs by two approaches. First we describe elevated-temperature lifetests on Ka-band LNA MMICs, for studying all thermally-driven degradation mechanisms. Then we describe ramped-voltage studies of separate capacitors, for measuring time-dependent dielectric breakdown (TDDB), which is accelerated mostly by elevated voltage.
Databáze: OpenAIRE