Improved Electrical Characteristics of P-type Tunnel Field-Effect Transistor With Source-Pocket Junction Formed Using High-Angle Implantation

Autor:	Huaxiang Yin, Qingzhu Zhang, Gaobo Xu, Jinshun Bi, Zhihao Li, Guilong Tao, Wenwu Wang, Jianhui Bu, Chao Zhao, Zhenhua Wu, Jinbiao Liu, Qiuxia Xu, Guoliang Tian, Huilong Zhu, Yongliang Li, Junfeng Li
Rok vydání:	2019
Předmět:	010302 applied physics Materials science Silicon business.industry Transistor chemistry.chemical_element Tunnel field-effect transistor 01 natural sciences law.invention chemistry law Subthreshold swing Logic gate 0103 physical sciences Optoelectronics High angle business Quantum tunnelling
Zdroj:	2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
DOI:	10.1109/s3s46989.2019.9320653
Popis:	In this paper, a p-type tunnel field-effect transistor with source-pocket junction (SPTFET) has been presented. The source-pocket junction was formed at the interface between source and channel region using BF 2 high-angle implantation, which is helpful to reduce the tunneling distance and increase the carriers’ tunneling probability. Compared with the TFET without source-pocket junction, the fabricated SPTFET exhibits better electrical characteristics, such as large on-state current and small subthreshold swing.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::18aeb3a812cd61b8f15a56204c1bb327 https://doi.org/10.1109/s3s46989.2019.9320653 Zobrazit plný text záznamu