The near infrared photoluminescence of epitaxial Ga0.5In0.5P

Autor:	Jiachang Liang, Jialong Zhao, Ying Gao
Rok vydání:	1995
Předmět:	Photoluminescence Silicon Inorganic chemistry Biophysics chemistry.chemical_element General Chemistry Chemical vapor deposition Condensed Matter Physics Epitaxy Biochemistry Molecular physics Acceptor Atomic and Molecular Physics and Optics chemistry Vacancy defect Gallium Excitation
Zdroj:	Journal of Luminescence. 63:41-46
ISSN:	0022-2313
DOI:	10.1016/0022-2313(94)00055-h
Popis:	The 1.17, 0.99 and 0.85 eV photoluminescence emission in Gao.5Ino.5P epilayers grown on GaAs substrates by metal-organic chemical vapor deposition have been observed. Only the 1.17 eV emission depends on the ordered structure of Ga0.5In0.5P. A detailed study of the 1.17eV emission has been made at various temperatures and excitation intensities. The 1.17eV emission is interpreted as arising from the recombination of the donor-acceptor pair (DAP), composed of a silicon donor on the gallium sublattice site and a gallium vacancy acceptor as the nearest neighbor. The relationship between the ordered structure and the recombination energy of DAP is examined and a new energy equation for DAP transition is deduced.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::18a0f141fa637fadafd1159089f208b8 https://doi.org/10.1016/0022-2313(94)00055-h Zobrazit plný text záznamu Full Text from ScienceDirect