A Body-Biasing Technique for Single-Event Transient Mitigation in 28-nm Bulk CMOS Process
| Autor: | Shengyu Song, Yang Guo, Hengzhou Yuan, Jianjun Chen, Bin Liang, Yaqing Chi, Jingtian Liu, Qian Sun |
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| Rok vydání: | 2021 |
| Předmět: |
Combinational logic
Nuclear and High Energy Physics Computer science Transistor NAND gate Biasing law.invention Mechanism (engineering) Set (abstract data type) Nuclear Energy and Engineering law Electronic engineering Transient (oscillation) Electrical and Electronic Engineering Event (probability theory) |
| Zdroj: | IEEE Transactions on Nuclear Science. 68:2717-2723 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2021.3123335 |
| Popis: | Single-event transient (SET) glitches can be modified by body-biasing controlling techniques. In this paper, a body-biasing configuration is proposed in combinational circuits, which plays no role during devices’ normal operation, but significantly mitigates SET disturbance as ion strike happens. NOR cell chains and NAND cell chains are served as cases to investigate the impact of the proposed configuration on SET vulnerabilities under two groups of heavy-ion experiments. Experimental data illustrate that transistors with body tied to source (BTS) significantly reduce the SET cross-section compared to the normal designs. The physical mechanism of the proposed technique is quantitatively analyzed in detail. |
| Databáze: | OpenAIRE |
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