Strong Tunneling in the Single-Electron Transistor

Autor:	Cristian Urbina, Michel Devoret, Daniel Esteve, Vincent Bouchiat, Philippe Joyez
Rok vydání:	1997
Předmět:	Physics Condensed matter physics law Transistor Bipolar junction transistor Induced high electron mobility transistor General Physics and Astronomy Coulomb blockade Conductance Conductance quantum Quantum tunnelling law.invention Threshold voltage
Zdroj:	Physical Review Letters. 79:1349-1352
ISSN:	1079-7114 0031-9007
DOI:	10.1103/physrevlett.79.1349
Popis:	We have investigated the suppression of single-electron charging effects in metallic single-electron transistors when the conductance of the tunnel junctions becomes larger than the conductance quantum ${e}^{2}/h$. We find that the Coulomb blockade of the conductance is progressively shifted at lower temperatures. The experimental results agree quantitatively with the available $1/T$ expansion at high temperature, and qualitatively with the predictions of an effective two-state model at low temperature, which predicts at $T\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}0$ a blockade of conductance for all gate voltages.
Databáze:	OpenAIRE
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