Temperature Effect on Intermetallic Compound Growth Kinetics of Cu Pillar/Sn Bumps
| Autor: | Gi-Tae Lim, Kiwook Lee, Young-Bae Park, Byoung-Joon Kim, Young-Chang Joo, Jaedong Kim |
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| Rok vydání: | 2009 |
| Předmět: |
Solid-state physics
Kirkendall effect Chemistry Annealing (metallurgy) Scanning electron microscope Pillar Intermetallic Analytical chemistry Activation energy Condensed Matter Physics Electronic Optical and Magnetic Materials Crystallography Materials Chemistry Growth rate Electrical and Electronic Engineering |
| Zdroj: | Journal of Electronic Materials. 38:2228-2233 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-009-0922-0 |
| Popis: | The in situ intermetallic compound (IMC) growth in Cu pillar/Sn bumps was investigated by isothermal annealing at 120°C, 150°C, and 180°C using an in situ scanning electron microscope. Only the Cu6Sn5 phase formed at the interface between the Cu pillar and Sn during the reflow process. The Cu3Sn phase formed and grew at the interfaces between the Cu pillar and Cu6Sn5 with increased annealing time. Total (Cu6Sn5 + Cu3Sn) IMC thickness increased linearly with the square root of annealing time. The growth slopes of total IMC decreased after 240 h at 150°C and 60 h at 180°C, due to the fact that the Cu6Sn5 phase transforms to the Cu3Sn phase when all of the remaining Sn phase in the Cu pillar bump is completely exhausted. The complete consumption time of the Sn phase at 180°C was shorter than that at 150°C. The apparent activation energy for total IMC growth was determined to be 0.57 eV. |
| Databáze: | OpenAIRE |
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