Atmospheric-Pressure Plasma Activation for Low Temperature Bonding

Autor:	Mervyn Armstrong, J.H. Montgomery, Y.W. Low, Paul Rainey, Neil Mitchell, P. Baine, Harold Gamble, David McNeill
Rok vydání:	2010
Předmět:	Materials science Analytical chemistry Atmospheric-pressure plasma
Zdroj:	ECS Transactions. 33:319-327
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.3483521
Popis:	An atmospheric plasma activation system has been employed to study its application on low temperature wafer bonding. Oxygen activation on PECVD oxide for bonding of temperature sensitive materials shows no pin hole when activating oxide with thickness more than 0.25 microns. Activation on thermal oxide by helium plasma also shows a pin hole free oxide. Bond strength approximately 1000 mJ/m2 is achieved after 250 degree celcius post-bond anneal which is about twice the bond strength of non-activated samples. Multiple UV components from the helium plasma were detected by spectograph. These UV spectra might have contributed to the bond strength enhancement in Si-SiO2 bonding.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1889446971059cf296e6ffe01f7f1ffb https://doi.org/10.1149/1.3483521 Zobrazit plný text záznamu