120/sup °/ operation of 10Gbps direct modulated 1.3μm AiGaInAsMQW DFB laser diodes

Autor: Masayoshi Takemi, Kazuhisa Takagi, Chikara Watatani, Etsuji Omura, S. Shirai, Toshitaka Aoyagi, T. Ota
Rok vydání: 2005
Předmět:
Zdroj: 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..
DOI: 10.1109/iciprm.2004.1442830
Popis: 1.3 /spl mu/m AlGaInAs-MQW ridge waveguide DFB-LDs with a buried grating close to active layer in n-cladding layer was developed. The light output power over 5 mW and clear eye opening with no mask hits for OC-192 under 10 Gbps direct modulation have been realized from 25 /spl deg/C to 120 /spl deg/C. The stable operation over 1600 hours under the APC mode of 10 mW at 95 /spl deg/C has been confirmed.
Databáze: OpenAIRE