Low energy secondary ion mass spectrometry with sub-keV O2+ beams at glancing incidence
| Autor: | L. Contreras, D. D. Sieloff, Z.X. Jiang, B. Robichaud, T. Guenther, K. Kim, J. Benavides |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Resolution (mass spectrometry) Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films Ion Secondary ion mass spectrometry chemistry Angle of incidence (optics) Sputtering Surface roughness Diffusion (business) Atomic physics Boron |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 26:1120-1127 |
| ISSN: | 1520-8559 0734-2101 |
| Popis: | The ever increasing interest in surface analysis techniques with excellent depth resolution, great detection sensitivity, and good throughput has been a driving force for development of dynamic secondary ion mass spectrometry using low energy primary beams. This work investigated sputtering erosion of Si and emission of secondary ions from Si bombarded by sub-keV O2+ beams at glancing incidence. It was demonstrated that surface roughening remained minimal for 250 and 500eV O2+ beams at an angle of incidence above 80° but developed rapidly at angles between 60° and 80°. The depth resolution for B and Ge appeared very different at the glancing incidence and changed dramatically in opposite ways as the angle of incidence decreased. The difference in the depth resolution was explained by the different diffusion/segregation behavior between B and Ge during O2+ bombardment. In general, the use of sub-keV O2+ beams at the glancing incidence (above 80°) favored a thinner altered layer, a short surface transient, ... |
| Databáze: | OpenAIRE |
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