Electrical profiling and optical activation studies of Be‐implanted GaAs

Autor:	K. V. Vaidyanathan, M.J. Helix, W. V. McLevige, B. G. Streetman
Rok vydání:	1977
Předmět:	Photoluminescence Materials science business.industry Annealing (metallurgy) General Physics and Astronomy Charged particle Ion Ion implantation Hall effect Electrical resistivity and conductivity Optoelectronics business Luminescence Nuclear chemistry
Zdroj:	Journal of Applied Physics. 48:3342-3346
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.324218
Popis:	Differential resistivity and Hall‐effect measurements have been utilized to study the annealing behavior and electrical carrier‐distribution profiles of Be‐implanted GaAs. A maximum of 90–100% electrical activation occurs during 900 °C anneals for implanted Be concentrations less than ∼5×1018 cm−3. For higher fluences, however, a heavily concentration‐dependent diffusion is observed, and the measured electrical activation is complicated by outdiffusion of Be into the Si3N4 encapsulant. In these cases, a maximum in the electrical activation appears for annealing near 700 °C. Low‐temperature (5 °K) photoluminescence substantiates previous findings that 900 °C annealing results in maximum optical activation and lattice recovery.
Databáze:	OpenAIRE
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