A new approach to study the effect of generation rate on drain-source current of bilayer graphene transistors
| Autor: | Harith Ahmad, Mahdiar Ghadiry, A. AbdManaf |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Graphene business.industry Monte Carlo method Transistor General Physics and Astronomy Nanotechnology 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences law.invention Impact ionization law Ionization 0103 physical sciences Physics::Atomic and Molecular Clusters Optoelectronics Field-effect transistor 0210 nano-technology Bilayer graphene business Graphene nanoribbons |
| Zdroj: | Indian Journal of Physics. 90:1127-1132 |
| ISSN: | 0974-9845 0973-1458 |
| DOI: | 10.1007/s12648-016-0856-3 |
| Popis: | This paper presents a new approach to study the effect of impact ionization on the current of bilayer graphene field effect transistors. Analytical models for surface potential and current together with a Monte Carlo approach which include the edge effect scattering are used to calculate the current and generation rate in bilayer graphene transistors due to ionization. FlexPDE simulation is also employed for verification of surface potential modeling. Using the approach, the profile of generation rate, surface potential and current are plotted with respect to several structural parameters. We have shown that ignoring this effect in the modeling will result in an error of up to 10 % for a typical 30 nm bilayer graphene field effect transistor. As a result, we conclude that any analytical study ignoring the ionization is incomplete for bilayer graphene field effect transistors. The model presented here can be applied in optimization of photo detectors based on graphene. |
| Databáze: | OpenAIRE |
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