Photopumped red-emitting InP/In0.5Al0.3Ga0.2P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition

Autor:	Venkatesh Narayanamurti, R. D. Dupuis, D. A. Kellogg, Nick Holonyak, Jae-Hyun Ryou, D. T. Mathes, Gabriel Walter, C. V. Reddy, Robert Hull
Rok vydání:	2001
Předmět:	Surface coating Photoluminescence Materials science Physics and Astronomy (miscellaneous) Quantum dot laser business.industry Quantum dot Optoelectronics Heterojunction Chemical vapor deposition business Lasing threshold Semiconductor laser theory
Zdroj:	Applied Physics Letters. 78:4091-4093
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1382622
Popis:	We report the 300 K operation of optically pumped red-emitting lasers fabricated from InP self-assembled quantum dots embedded in In0.5Al0.3Ga0.2P layers on GaAs (100) substrates grown by metalorganic chemical vapor deposition. Quantum dots grown at 650 °C on In0.5Al0.3Ga0.2P layers have a high density on the order of 1010 cm−2 and the dominant size of individual quantum dots ranges from ∼5 to ∼10 nm for 7.5 monolayer “equivalent growth.” These InP/In0.5Al0.3Ga0.2P quantum dot heterostructures are characterized by atomic force microscopy, high-resolution transmission electron microscopy, and photoluminescence. Laser structures are prepared from wafers having two vertically stacked InP quantum dot active layers within a 100-nm-thick In0.5Al0.3Ga0.2P waveguide and upper and lower 600 nm InAlP cladding layers. We observe lasing at λ∼680 nm at room temperature in optically pumped samples.
Databáze:	OpenAIRE
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