Das Schädigungsverhalten von C/C-SiC
| Autor: | Karl Maile, Dirk Walz, Annett Udoh |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Materials science
business.industry Tension (physics) Mechanical Engineering Plasticity Total strain Stress (mechanics) chemistry.chemical_compound Optics chemistry Mechanics of Materials Nondestructive testing Microscopy Silicon carbide General Materials Science Composite material business Electrical conductor |
| Zdroj: | Materials Testing. 40:256-260 |
| ISSN: | 2195-8572 0025-5300 |
| DOI: | 10.1515/mt-1998-400613 |
| Popis: | Damage state and development in Carbon fibre reinforced silicon carbide (C/C-SiC) has been investigated by means of destructive and non destructive testing methods. This type of material shows a defect pattern already after manufacturing which is mainly caused by the thermal mismatch of fibres and matrix. SEM investigations showed that at these inherent cracks crack opening occurs after tension loading. Light microscopy using digital image processing has been performed in order to determine if the number of cracks ranging in meso- and macroscale is influenced by tension loading. No significant change was observed. The DC potential drop method was used to detect damage mainly in the conductive fibre bundle area. A relationship between nominal stress, true stress, total strain and remnant plastic strain respectively, and the measured potential was found. This relations could be used to quantify damage in tension-loaded C/C-SiC specimens. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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