Characterization of dynamic behaviors of defects in Si substrates created by H2 plasma using conductance method

Autor:	Tetsuya Tatsumi, Tomohiro Kuyama, Masanaga Fukawsawa, Keiichiro Urabe, Koji Eriguchi
Rok vydání:	2020
Předmět:	Materials science Physics and Astronomy (miscellaneous) Si substrate Chemical engineering General Engineering General Physics and Astronomy Plasma Conductance method Rapid thermal annealing Characterization (materials science)
Zdroj:	Japanese Journal of Applied Physics. 59:SJJC02
ISSN:	1347-4065 0021-4922
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::185e38f8797792610bec353e6c23c7cd https://doi.org/10.35848/1347-4065/ab8280 Zobrazit plný text záznamu