Relaxation of thermally induced defects in LPCVD amorphous silicon
| Autor: | Stanislaw M. Pietruszko, S. C. Agarwal, M. Kostana, Pratima Agarwal |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Amorphous silicon
Materials science Hydrogen Silicon Doping Analytical chemistry chemistry.chemical_element Chemical vapor deposition Activation energy Condensed Matter Physics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science chemistry.chemical_compound chemistry Condensed Matter::Superconductivity Metastability Materials Chemistry Ceramics and Composites Physics::Atomic Physics Thin film |
| Zdroj: | Journal of Non-Crystalline Solids. :328-331 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/s0022-3093(98)00174-4 |
| Popis: | Thermally induced metastability has been studied on P doped LPCVD a-Si (low pressure chemical vapour deposited amorphous silicon) films as a function of the concentration of hydrogen in these films. The hydrogen concentration has been varied over two orders of magnitude, from 0.06 at.% in as-deposited films to 15 at.% in heavily implanted films. We find that thermal metastability effects are present even at the lowest concentrations of hydrogen. These become larger as hydrogen concentration increases. Our studies indicate that hydrogen plays an important role in thermal equilibration of a-Si:H and supports the hydrogen glass model. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect