0.25 μm AlGaN/GaN HEMT nonlinearity modelling and characterization over a wide temperature range

Autor:	Christophe Gaquiere, Mayahsa M. Ali, Peter B. K. Kyabaggu, Yongjian Zhang, Norshakila Haris, Ali A. Rezazadeh, Mohammad A. Alim
Rok vydání:	2015
Předmět:	Nonlinear system Materials science business.industry Optoelectronics Algan gan High-electron-mobility transistor Atmospheric temperature range business Monolithic microwave integrated circuit Characterization (materials science) Intermodulation
Zdroj:	2015 10th European Microwave Integrated Circuits Conference (EuMIC).
DOI:	10.1109/eumic.2015.7345088
Popis:	0.25 μm gate AlGaN/GaN/SiC HEMT's nonlinearity modelling and characterization over a wide temperature and frequency have been studied for the first time. The nonlinearity of these devices has been carried out using a two-tone intermodulation distortion. An empirical analytical model has been developed and good agreement was established between the simulated and measured data. This result is valuable for the future design optimizations of the advanced GaN based MMIC's operating at high temperature.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::184d25fce36198e610012e773c869114 https://doi.org/10.1109/eumic.2015.7345088 Zobrazit plný text záznamu