Dielectric Relaxation and Conductivity of CdGa2S4 Single Crystal Grown by the CTR Method
| Autor: | D. T. Guseinov, S. N. Mustafaeva, S. M. Asadov |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Dc conductivity Fermi level 02 engineering and technology General Chemistry Dielectric Conductivity 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences symbols.namesake 0103 physical sciences symbols Relaxation (physics) General Materials Science Dielectric loss Chemical transport reaction 0210 nano-technology Single crystal |
| Zdroj: | Crystallography Reports. 63:1160-1162 |
| ISSN: | 1562-689X 1063-7745 |
| DOI: | 10.1134/s1063774518070155 |
| Popis: | CdGa2S4 single crystals (a = 5.555 ± 0.002 A, c = 10.190 ± 0.005 A) have been grown by the chemical transport reaction (CTR) method, and their dielectric properties have been analyzed. An experimental study of the frequency dependence of the dielectric coefficients and conductivity of the CdGa2S4 single crystal has made it possible to reveal the nature of dielectric losses, establish the hopping charge-transfer mechanism, and estimate the parameters of localized states (density and energy spread of states near the Fermi level; mean duration and length of hops; and concentration of deep traps, which implement ac conductivity). |
| Databáze: | OpenAIRE |
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