A revised model for carrier trapping-detrapping noise
| Autor: | Amiram Ron, Amikam Nemirovsky |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Activation barrier
Chemistry Oxide Electron trapping Semiconductor device Trapping Condensed Matter Physics Noise (electronics) Electronic Optical and Magnetic Materials Computational physics chemistry.chemical_compound Materials Chemistry Electronic engineering Flicker noise Electrical and Electronic Engineering |
| Zdroj: | Solid-State Electronics. 41:1811-1818 |
| ISSN: | 0038-1101 |
| Popis: | The model presented here is an extension of the carrier trapping-detrapping model for 1 f noise, in semiconductor devices with interfaces formed by oxide or insulating layers. The validity of the conventional assumptions, currently used to explain trapping-detrapping 1 f noise, is discussed and a revised set of assumptions is proposed. It is shown that 1 f noise that is caused by electron trapping and detrapping at oxide interfaces, can be explained for a wide variety of activation barrier distributions, assuming the revised set of assumptions. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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