Debye temperature and standard entropies and enthalpies of compound semiconductors of the type I-III-VI2

Autor: F. A. Thiel, K. J. Bachmann, F. S. L. Hsu, H. M. Kasper
Rok vydání: 1977
Předmět:
Zdroj: Journal of Electronic Materials. 6:431-448
ISSN: 1543-186X
0361-5235
DOI: 10.1007/bf02660497
Popis: The heat capacities at constant pressure have been measured for CuInSe2, CuInTe2 and AgGaTe2 in the temperature range 1K ≤T≤40K and for CuInS2 and AgInTe2 between 1 K and room temperature. From the low temperature data we derive the following Debye temperatures θD in the limit T → O K: θD(CuInS2) = 273 K, θD(CuInSe2) = 222 K, θD(CuInTe2) = 191 K, θD(AgGaTe2) = 182 K and θD(AgInTe2) = 156 K. A plot of the average atomic heat capacity at constant volume Cv shows that the data scale to one general curve for all 5 compounds considered in this paper. This is, also, true for a plot Cv, i.e., all I-III-VI2 compounds measured thus far deviate similarly from the Debye approximation. By integration of the general curves Cv(T/θD) and θD x Cv(T/θD) we derive tne standard entropies S 0 298 and energies E 0 298 -E 0 0 of 11 compounds of the type I-III-VI2, for which the Debye temperatures are known. The difference between the energies E 0 298 -E 0 0 and enthalpies H 0 298 -H 0 0 is within the error limits of the experimental data (< 1%). The molar S 0 298 and H 0 298 -H 0 0 values for the I-III-VI2 compounds are approximately twice the corresponding molar values for their II-VI isoelectronic analogs. The thermodynamic functions at standard state obtained by integration of the experimental data are all < 10% smaller than the corresponding values estimated on the basis of the Debye approximation.
Databáze: OpenAIRE