Dual-Color InAs/GaSb Cascaded Superlattice Light-Emitting Diodes
| Autor: | Thomas F. Boggess, Jonathon T. Olesberg, Dennis Norton, Russell J. Ricker, L. M. Murray, Andrew Hudson, Sydney Provence, John P. Prineas |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
Infrared business.industry Superlattice Stacking Condensed Matter Physics Atomic and Molecular Physics and Optics law.invention Wavelength law Optoelectronics Electrical and Electronic Engineering Photolithography Atomic physics business Molecular beam epitaxy Diode Light-emitting diode |
| Zdroj: | IEEE Journal of Quantum Electronics. 51:1-6 |
| ISSN: | 1558-1713 0018-9197 |
| Popis: | Over the last decade, InAs/GaSb superlattice structures have become an increasingly important technology for infrared applications. By stacking two superlattice structures back-to-back with a conductive layer separating them, independently operable, dual color, cascaded InAs/GaSb superlattice light-emitting diodes were grown via molecular beam epitaxy on (100) GaSb substrates. An $8\times 8$ matrix of 48- $\mu \text{m}$ pitch pixels was fabricated using standard photolithography and wet-etch techniques. At 77 K, the emitted wavelengths are in the 3.2–4.2- and 4.2–5.2- $\mu \text{m}$ range, with peak wavelengths at 3.81 and $4.72~\mu \text{m}$ . In quasi-continuous operation, radiances in excess of 2 W/cm $^{\mathrm { {2}}}\,\cdot \,$ sr from the longer wave and 5 W/cm $^{\mathrm { {2}}}\,\cdot \,$ sr from the shorter wave emitters are achieved. |
| Databáze: | OpenAIRE |
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