Compositional Dependence of the Optical Properties of Amorphous Semiconducting Glass Se80Ge20−x Cd x (0 ≤ x ≤ 12 at.%) Thin Films
Autor: | A. S. Farid, N.A. Hegab, M.A. Afifi, A. M. Alrebati, A. M. Shakra |
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Rok vydání: | 2016 |
Předmět: |
010302 applied physics
Materials science Solid-state physics Band gap Analytical chemistry Physics::Optics 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Amorphous solid Attenuation coefficient 0103 physical sciences Materials Chemistry Transmittance Electrical and Electronic Engineering Thin film 0210 nano-technology Spectroscopy |
Zdroj: | Journal of Electronic Materials. 45:3332-3339 |
ISSN: | 1543-186X 0361-5235 |
DOI: | 10.1007/s11664-016-4470-0 |
Popis: | Se80Ge20−xCdx (0 ≤ x ≤ 12 at.%) compositions were prepared by a quenching technique. Thin films of the obtained compositions were deposited on dry clean glass substrates by a thermal evaporation technique. The chemical composition of the film samples have been determined by energy dispersive x-ray spectroscopy (EDX). X-ray diffraction measurements showed the amorphous nature of the studied films. The optical constants (n, k) were determined for the studied films using spectrophotometric measurements of transmittance T(λ) in the wavelength range (350 nm to 2500 nm), and using Swanepoel’s method. The values of the dispersion energy Ed, oscillator energy Eo, the lattice dielectric constant e∞L and the high-frequency dielectric constant es were determined. The optical band gap \( E_{g}^{\rm{opt}} \) is estimated for all compositions from the absorption coefficient α. The analysis of the optical absorption data revealed the existence of allowed indirect transitions for all compositions. The effect of adding Cd content on the obtained optical parameters was also discussed. |
Databáze: | OpenAIRE |
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