On the Dopant, Defect States, and Mobility in W Doped Amorphous In2O3 for BEOL Transistors

Autor:	Yaoqiao Hu, Khandker Akif Aabrar, Andrea Palmieri, Matthew Bergschneider, Milan Pešić, Chadwin D. Young, Suman Datta, Kyeongjae Cho
Rok vydání:	2023
Zdroj:	2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
DOI:	10.1109/edtm55494.2023.10103082
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::17f812a5605d385f5787e09118b66df8 https://doi.org/10.1109/edtm55494.2023.10103082 Zobrazit plný text záznamu