| Autor: |
T. Chisholm, J.P. Davey, J. Somers, J. Romijn, B. H. Koek, A. J. v. Run |
| Rok vydání: |
1994 |
| Předmět: |
|
| Zdroj: |
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:3409 |
| ISSN: |
0734-211X |
| DOI: |
10.1116/1.587522 |
| Popis: |
We have investigated the usage of high energy (100 kV) electron beam lithography for various applications. Exposures with high energy electrons are less susceptible to resist thickness variations. Additional exposures from adjacent pixels and shapes can be corrected relatively easily compared to medium energy exposures (20–50 kV). The 100 kV performance of the Leica Cambridge EBPG5‐FE system is described. A beam stability of better than 10 nm and a drift of less than 20 nm/h are combined with a Schottky field emission source for high current density. Spot sizes of 7–165 nm with corresponding currents between 0.7 and 120 nA can be selected to enable both very high resolution and accurate mask making. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
