Analysis of Degradation Mechanism in SONOS-TFT Under Hot-Carrier Operation
| Autor: | Ming-Hsien Lee, Ting-Chang Chang, Chia-Sheng Lin, Jim-Shone Chen, Hung Wei Li, Fu-Yen Jian, Ching-Chieh Shih, Tien-Yu Hsieh, Shih-Ching Chen, Te-Chih Chen |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Silicon business.industry Transistor Gate dielectric Electrical engineering chemistry.chemical_element Dielectric engineering.material Electronic Optical and Magnetic Materials law.invention Tunnel effect Polycrystalline silicon chemistry law Thin-film transistor engineering Optoelectronics Electrical and Electronic Engineering business Quantum tunnelling |
| Zdroj: | IEEE Electron Device Letters. 31:1413-1415 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2010.2079912 |
| Popis: | This letter investigates the degradation mechanism of polycrystalline silicon thin-film transistors with a silicon-oxide-nitride-oxide-silicon structure under off -state stress. During the electrical stress, the hot hole generated from band-to-band tunneling process will inject into gate dielectric, and the significant on-state degradation (more than 1 order) indicates that the interface states are accompanied with hot-hole injection. In addition, the asymmetric I- V characteristics indicate that the interface states are located near the drain side. Moreover, the ISE-TCAD simulation tool was utilized to model the degradation mechanism and analyze trap states distribution. Although both the vertical and lateral electrical fields are factors for degradation and hot-hole injection, the degradation is mainly affected by the lateral electrical field over a critical point. |
| Databáze: | OpenAIRE |
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