Reducing Ambipolar Conduction in a Graphene Tunneling Field Effect Transistor (GTFET) via Bandgap Engineering
| Autor: | Hamed Jooypa, Mina Mazrouei, Daryoosh Dideban |
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| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | ECS Journal of Solid State Science and Technology. 10:051002 |
| ISSN: | 2162-8777 2162-8769 |
| DOI: | 10.1149/2162-8777/abfa2d |
| Popis: | Tunneling field effect devices suffer from two main problems comprised of low on-state current and intrinsic ambipolar conduction. In the present work, we propose a graphene tunneling field effect transistor (GTFET), that uses graphene nanoribbon (GNR) with a narrow bandgap (0.1 eV) in the source and another GNR with a wider bandgap (0.7 eV) in the drain and channel regions. This structure improves on-state current, reduces ambipolar conduction and increases the ION/IOFF. We also examine the effect of important parameters including doping concentration, drain voltage, bandgap, gate work function, and dielectric thickness on the electrical performance of the proposed device. Moreover, we compare the digital and analog performance of the proposed structure with two other GTFETs having GNRs with wide or narrow bandgaps across the source, channel and drain regions. The proposed GTFET shows a very high on-state to off-state current ratio (1E11) and thus, it is superior for digital applications. In addition, by calculating the transconductance (g m ) and output conductance (g d ) we find that the proposed structure has a higher intrinsic gain compared to the two other structures. Therefore, it is more suitable for analogue applications in comparison with two other structures. |
| Databáze: | OpenAIRE |
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