Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection
| Autor: | Lars Rebohle, Wolfgang Skorupa, Alexei Nazarov, Thoralf Gebel, I.N. Osiyuk, V. S. Lysenko |
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| Rok vydání: | 2002 |
| Předmět: |
Materials science
Charge (physics) Trapping Condensed Matter Physics Molecular physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ion Electron injection Degradation (geology) High field Electrical and Electronic Engineering Safety Risk Reliability and Quality |
| Zdroj: | Microelectronics Reliability. 42:1461-1464 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/s0026-2714(02)00170-1 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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