Hyperfine Interaction and Shockley–Read–Hall Recombination in Semiconductors

Autor:	Thierry Amand, V. K. Kalevich, Andrea Balocchi, E. L. Ivchenko, Xavier Marie, Alejandro Kunold
Rok vydání:	2019
Předmět:	010302 applied physics Physics Condensed matter physics Magnetism 02 engineering and technology Electron 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Magnetic field Paramagnetism Hall effect 0103 physical sciences 0210 nano-technology Spin (physics) Hyperfine structure Excitation
Zdroj:	Semiconductors. 53:1175-1181
ISSN:	1090-6479 1063-7826
DOI:	10.1134/s1063782619090070
Popis:	Experimental and theoretical studies on optical orientation and spin-dependent recombination in a semiconductor in a magnetic field under the normal incidence of circularly polarized radiation onto the sample surface are reviewed. The experiments were carried out on GaAs1 –xNx solid solutions, in which Ga2+ interstitial displacement defects play the role of deep paramagnetic centers responsible for spin-dependent recombination. It is established that, in the investigated materials, the hyperfine interaction of a localized electron with one nucleus of the paramagnetic center remains strong even at room temperature. The theory is compared with an experiment conducted in the steady-state excitation mode and under two-pulse pump-probe conditions. An analytical formula for spin beats in a magnetic field is derived.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::17c86449c1492c696cb17199aa666845 https://doi.org/10.1134/s1063782619090070 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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