| Autor: |
Rudy Peeters, Keith Gronlund, S. N. Kang, K. van Ingen-Schenau, Jeong-ho Yeo, Joerg Zimmermann, Insung Kim, Natalia Davydova, Oliver Schumann, Christian Wagner, Hua-yu Liu, Dorothe Oorschot, Frank A. J. M. Driessen, Vidya Vaenkatesan, Hoyoung Kang, Jiong Jiang, Y. Lee |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.898955 |
| Popis: |
In this paper we will present ASML's holistic approach to lithography for EUV. This total approach combines the various components needed to achieve the correct on-product demands of our customers in terms of patterning fidelity across the entire image field and across the entire wafer. We will start giving a general update on ASML's NXE scanner platform of which the 6 th NXE:3100 systems is now being shipped to a leading chipmaker. The emphasis will be on wafer imaging results for various applications such as flash memory and logic's SRAM. Then we will describe the second holistic component, NXE-computational lithography, which was developed to speed-up early learning on EUV and to achieve high accuracy on the wafers. Thirdly, the YieldStar angular-resolved scatterometry tool that supports the scanner's stability was used to characterize the system and calibrate the models. The wafer-results reveal in detail predicted imaging effects of NXE lithography and allow a calibration of system parameters and characterization of hardware components. We will demonstrate mask-induced imaging effects and propose an improvement of the current EUV blank or mask-making processes. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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