Growth of ternary ZnCdSe nanowires and the fabrication of ZnCdSe nanowire photodetectors

Autor:	Sheng-Joue Young, B.W. Lan, C. H. Hsiao, Shoou-Jinn Chang, S. H. Chih, S. C. Hung, Y.C. Cheng, Bohr-Ran Huang
Rok vydání:	2010
Předmět:	Photocurrent Materials science business.industry Nanowire Photodetector Substrate (electronics) Condensed Matter Physics Optoelectronics General Materials Science Electrical and Electronic Engineering Ternary operation business Wurtzite crystal structure Molecular beam epitaxy Dark current
Zdroj:	Superlattices and Microstructures. 48:50-57
ISSN:	0749-6036
DOI:	10.1016/j.spmi.2010.04.014
Popis:	The authors report the growth of high density ternary ZnCdSe nanowires on an oxidized Si(100) substrate using molecular beam epitaxy and the fabrication of a ZnCdSe nanowire photodetector. It was found that the as-grown ZnCdSe nanowires exhibited a mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that average length and width of the ZnCdSe nanowires were ∼1.8 μm and ∼42.7 nm, respectively. Furthermore, it was found that photocurrent to dark current contrast ratio was around 25 for the fabricated photodetector under 5 V applied bias.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::17bb86e9c247e6c1cf53437f6e7f6e42 https://doi.org/10.1016/j.spmi.2010.04.014 Zobrazit plný text záznamu Full Text from ScienceDirect