Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition α-SiC:N:H Films
| Autor: | Mao-Chieh Chen, Chen-Hua Yu, Hsi-Ping Chen, Mong-Song Liang, Syun-Ming Jang, Chiu-Chih Chiang, Zhen-Cheng Wu, Wei-Hao Wu, Chung-Chi Ko |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) General Engineering Analytical chemistry General Physics and Astronomy chemistry.chemical_element Dielectric Nitrogen chemistry.chemical_compound Carbon film chemistry Plasma-enhanced chemical vapor deposition Silicon carbide Atomic ratio Thermal stability Carbon |
| Zdroj: | Japanese Journal of Applied Physics. 42:4489-4494 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.42.4489 |
| Popis: | In this work, we investigate the thermal stability and physical and barrier properties of three species of plasma enhanced chemical vapor deposition (PECVD) α-SiC:N:H silicon carbide films with different carbon and nitrogen contents and dielectric constants less than a value of 5.5. For comparison, one species of α-SiN:H film with a k value of 7.2 is also studied. It is found that the dielectric constant decreases with increasing content of carbon and decreasing content of nitrogen in the α-SiC:N:H film. All of the three species of α-SiC:N:H and the one species of α-SiN:H films are thermally stable at temperatures up to 500°C. However, degraded barrier capability and moisture resistance were observed for the α-SiC:N:H film with a k value of 3.5, which has a C/Si atomic ratio of 0.875. This is presumably due to the poorly crosslinked molecular structure and porosity enhancement caused by the abundant amount of carbon in the α-SiC:N:H film. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|