Unified quasi-static MOSFET capacitance model
| Autor: | Kayoung Lee, Michael Shur, Tor A. Fjeldly, K.-M. Rho |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Engineering
Subthreshold conduction business.industry Charge (physics) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Capacitance Electronic Optical and Magnetic Materials Computational physics MOSFET Charge control Electronic engineering Field-effect transistor BSIM Electrical and Electronic Engineering business Voltage |
| Zdroj: | IEEE Transactions on Electron Devices. 40:131-136 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.249435 |
| Popis: | An accurate calculation of MOSFET capacitance-voltage (C-V) characteristics has to account for the bulk charge which is affected by nonuniform doping profiles and short-channel effects. In an approach based on the unified charge control model (UCCM), the voltage dependencies of the bulk charge are related to the standard parameters of the body plots which are routinely measured during MOSFET characterization. The results of the C-V calculations based on this model are in good agreement with experimental data and calculations based on the standard BSIM model. Compared to the BSIM simulations, the present model more accurately describes capacitances related to the bulk charge and the device subthreshold behavior, and it is suitable for incorporation into circuit simulators. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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