| Autor: |
Lino Reggiani, Luca Varani, Jevgenij Starikov, Pavel Shiktorov, Viktoras Gružinskis |
| Rok vydání: |
1996 |
| Předmět: |
|
| Zdroj: |
Hot Carriers in Semiconductors ISBN: 9781461380351 |
| DOI: |
10.1007/978-1-4613-0401-2_88 |
| Popis: |
Solid-state devices with S-type negative differential conductance (NDC) have a wide application in microelectronics as fast switchers and microwave power generators. Recently, significant attention has been devoted to the heterostructure hot-electron diode (HHED)1 where S-type NDC and high-frequency oscillations up to 100 GHz have been obtained1–4. To improve the high-frequency performance of the HHED we propose here to replace the anode n + contact with a p + layer thus introducing the possibility for an additional hole current and a second switching of the device to a higher conductance state. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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