The conduction properties of SIPOS
| Autor: | J.G. Simmons, M.J.B. Bolt |
|---|---|
| Rok vydání: | 1987 |
| Předmět: |
Condensed matter physics
Chemistry business.industry Electrical engineering Heterojunction Thermionic emission Atmospheric temperature range engineering.material Condensed Matter Physics Thermal conduction Electronic Optical and Magnetic Materials Field electron emission Polycrystalline silicon Electrical resistivity and conductivity Materials Chemistry engineering Electrical and Electronic Engineering business Quantum tunnelling |
| Zdroj: | Solid-State Electronics. 30:533-542 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(87)90209-7 |
| Popis: | The electrical characteristics of SIPOS-silicon heterojunctions are presented. The current-voltage characteristics as a function of temperature of SIPOS-silicon heterojunctions, with the SIPOS having different oxygen concentrations from 5.2 to 27.9 at.% and different film thicknesses, from 1200 to 5000 A, are reported. At temperatures above room temperature, the thermionic emission (TE) theory satisfactorily describes the carrier transport through the SIPOS films. At lower temperatures, a competing conduction mechanism comes into play which involves significant tunneling and the carrier transport is governed by thermionic field emission (TFE). Tarng's model, slightly modified to take account of the different device structure used, is presented which enables the current density-voltage characteristics of all four batches to be accurately predicted over the entire measured temperature range of each batch. Material parameters such as grain size, inter-grain barrier heights for electrons and holes, and the effective Richardson's constant, can be derived from the model and the measured current density-voltage temperature data. SIPOS stands for “semi-insulating polycrystalline silicon”. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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