| Autor: |
V. S. Sundaram, S. B. Saban, M. D. Morgan, W. E. Horne, B. D. Evans, J. R. Ketterl, M. B. Z. Morosini, N. B. Patel, H. Field |
| Rok vydání: |
1997 |
| Předmět: |
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| Zdroj: |
Third NREL Conference on thermophotovoltaic generation of electricity. |
| DOI: |
10.1063/1.53277 |
| Popis: |
In this work we report the characteristics of ternary, GaInSb (Eg=0.70 eV) and quarternary, GaInAsSb (Eg=0.5 eV) diffused junction photovoltaic devices. The unique feature of the quarternary device is the extended long-wavelength response to 2.1 microns enabling the efficient use of the blackbody-like thermal sources operating at 1373 K in thermophotovoltaic energy conversion systems. The ternary device was fabricated by diffusing zinc into a n-type (100) oriented GaInSb substrate. For the quarternary, a four micron thick Te doped GaInAsSb layer grown by LPE on a n-type GaSb(100) wafer was used as the starting substrate for zinc diffusion. The ternary device exhibits an open circuit voltage of 0.38 V, Fill Factor of 0.63 and a short circuit current of 0.8 A/cm2, while the corresponding values for the quarternary device are 0.25 V, 0.58 and 0.8 A/cm2, respectively. The peak internal quantum efficiency for the ternary is over 90% and that of the quarternary is above 75%. Process optimization should improve ... |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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