Factors affecting the long-term stability of Cu/Al ball bonds subjected to standard and extended high temperature storage
| Autor: | Charles J. Vath, M. Gunasekaran, Ramkumar Malliah |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Interconnection
Engineering drawing Materials science Flatness (systems theory) Composite number chemistry.chemical_element Crystal structure Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Aluminium Destructive testing Ball (bearing) Electrical and Electronic Engineering Composite material Safety Risk Reliability and Quality High temperature storage |
| Zdroj: | Microelectronics Reliability. 51:137-147 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2010.06.015 |
| Popis: | This paper presents the findings of work performed on 20-μm diameter copper wire of five different wire types from three suppliers. Gold wire is the control. The test die was mounted on BT (B (Bismaleimide) and T (Triazine)) resin substrates. The bonding parameters were optimized for each wire used. Part of the optimization process involved monitoring the flatness of the bonded ball and the amount of aluminum remaining under the bond. The crystal structure of each type of interconnect was examined using composite imaging techniques. Visual data such as ball size, thickness, and shape were collected. First and second bonds were subjected to destructive testing, such as ball shear and wire pull, throughout the preparation process. The samples were then subjected to an industry-standard, high temperature stress test to determine the long-term stability of the interface of each wire type. Data for all read points are presented on all tests performed and provide useful information on the material and process set best suited for long term reliability. |
| Databáze: | OpenAIRE |
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