| Autor: |
Yamin Zhang, Zhihong Feng, Yuanjie Lv, Shaobo Dun, Zhang Lisen, Wang Yuangang, Xubo Song, Shixiong Liang, Yang Dabao, Tan Xin, Zhirong Zhang |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
ASICON |
| DOI: |
10.1109/asicon47005.2019.8983542 |
| Popis: |
We presented a GaN Schottky diode model with consideration of self-heating effect of devices in operation. The impact of diode chip temperature on the current and capacitance was taken into account in this model. The thermal resistance of diode chip was extracted by simulation combined measurement to calculate the temperature of Schottky junction with different pumping power. Advantages of established device model in the design of a 220GHz frequency doubler were presented in the end. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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