| Autor: |
Ernest Y. Wu, Charles LaRow, Dimitris P. Ioannou |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
2011 International Electron Devices Meeting. |
| Popis: |
We report that charge trapping has a strong impact on failure detection, yielding many anomalous non-Poisson area effects in nFETs high-κ stacks. Time-to-failure (T FAIL ) distributions and voltage accelerations are found to strongly depend on stress waveforms such as interrupted DC stress and uninterrupted DC stress as well as unipolar and bipolar AC stress. Various correction methodologies such as SILC removal and voltage correction are considered to account for these adverse effects which are not present in SiO 2 films. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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