Annealing of zinc‐implanted GaAs
| Autor: | B.J. Sealy, N. J. Barrett, J. D. Grange, K.G. Stephens |
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| Rok vydání: | 1985 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 57:5470-5476 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.334823 |
| Popis: | A study of ion‐implanted zinc in GaAs has been made using three annealing techniques: e‐beam, graphite strip heating, and furnace annealing in an arsine ambient. The highest hole concentrations, 7–8×1019 cm−3, were obtained using electron‐beam annealing. Graphite strip heating and electron‐beam annealing were able to electrically activate 100% of the implanted dose. The effect of strain on the activation of the zinc has been demonstrated by comparing chemical‐vapor‐deposited Si3N4 with reactively evaporated AlN encapsulants. |
| Databáze: | OpenAIRE |
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