A New Backscattering Model for Nano-MOSFET Compact Modeling

Autor:	G. Lecarval, Sylvain Barraud, D. Villanueva, Herve Jaouen, E. Fuchs, Philippe Dollfus, E. Robilliart
Rok vydání:	2004
Předmět:	Materials science law Computation Monte Carlo method MOSFET Nano Transistor Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Drain current Spectroscopy Computational physics law.invention Diode
Zdroj:	Simulation of Semiconductor Processes and Devices 2004 ISBN: 9783709172124
DOI:	10.1007/978-3-7091-0624-2_58
Popis:	For fast computation of drain current in Nano-MOSFET, we have developed a new backscattering model based on the accurate determination of ballistic and backscattering probabilities along the channel. The main elements of this model are deduced from careful analysis of transport in devices using Monte Carlo simulation. The backscattering coefficient is in very good agreement with the results of Monte Carlo spectroscopy for MOS transistors and N+/N/N+ diodes.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1757b0a1f318cac7124444d63bedc075 https://doi.org/10.1007/978-3-7091-0624-2_58 Zobrazit plný text záznamu