| Autor: |
M. Hu, D.C. Wang, C.S. Wu, C.K. Pao, T.C. Cisco, C.P. Wen, A.T. Igawa |
| Rok vydání: |
2003 |
| Předmět: |
|
| Zdroj: |
GaAs IC Symposium Technical Digest 1992. |
| DOI: |
10.1109/gaas.1992.247270 |
| Popis: |
High-efficiency X-band power GaAs-AlGaAs HBT (heterojunction bipolar transistor) performance has been achieved. A common-base 6-emitter-finger HBT device (each finger periphery 2 mu m*20 mu m) exhibited a power-added-efficiency of 62.1%, an output power of 769 mW (power density of 6.4 W/mm), and a gain of 7.9 dB at 9 GHz. As compared to the published state-of-the-art results, this device showed better power efficiency and density at the same output power level. This high performance is attributed to process enhancement and a novel device topology. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
